Page 30 - 《真空与低温》2025年第3期
P. 30
陈越中等:背栅型纳米真空沟道晶体管阵列的电学特性及其高频小信号等效电路模型研究 301
field emission devices-Nano electrode geometries compari- electronics[J]. Nano Letters,2018,18(12):7478−7484.
son of performance and stability[J]. Small, 2022, 18(47): [21] WANG X, ZHENG C, XUE T, et al. Nanoscale vacuum
2203234. field emission triode with a double gate structure[J]. IEEE
[16] SHIH P C,PEROZEK J,AKINWANDE A I,et al. Anode- Electron Device Letters,2022,43(2):292−295.
integrated GaN field emitter arrays for compact vacuum [22] ZHANG Y,ZHANG G,ZHAN F,et al. Planar nanoscale
transistors[J]. IEEE Electron Device Letters,2023,44(11): vacuum channel transistors based on resistive switching[J].
1895−1898. Nanotechnology,2024,35(21):215205.
[17] WEI Y, CHEN F, HUANG R, et al. Fast response GaN
[23] XU J,QIN Y,SHI Y,et al. Design and circuit simulation of
nanoscale air channel diodes with highly stable 10 mA output
nanoscale vacuum channel transistors[J]. Nanoscale Advance,
current toward wafer-scale fabrication[J]. Advanced Science,
2020,2(8):3582−3587.
2023,10(17):2206385.
[24] FOWLER R H, NORDHEIM L. Electron emission in in-
[18] HSU S H, KANG W P, RAINA S, et al. Nanodiamond
tense electric fields [J]. 1928,119(781):173-181.
vacuum field emission device with gate modulated triode
[25] LENZLINGER M,SNOW E H. Fowler-Nordheim tunneling
characteristics[J]. Applied Physics Letters,2013,102(20):
into thermally grown SiO 2 [J]. Journal of Applied Physics,
203105.
1969,40(1):278−283.
[19] FAN L,BI J,XI K,et al. Sub-10-nm air channel field emis-
[26] ELLIS R K. Fowler-Nordheim emission from non-planar sur-
sion device with ultra-low operating voltage[J]. IEEE Elec-
faces[J]. IEEE Electron Device Letters,1982,3(11):330−
tron Device Lett,2021,42(9):1390−1393.
332.
[20] NIRANTAR S,AHMED T,REN G,et al. Metal–air tran-
sistors:semiconductor-free field-emission air-channel nano- (责任编辑:郭 云)
引文信息:陈越中,赵浩东,俞道龙,等. 背栅型纳米真空沟道晶体管阵列的电学特性及其高频小信号等效电路模型研究[J].
真空与低温,2025,31(3):292−301.
CHEN Y Z,ZHAO H D,YU D L,et al. Electrical characteristics and high-frequency small-signal equivalent circuit model
of back-gated nanoscale vacuum channel transistor arrays[J]. Vacuum and Cryogenics,2025,31(3):292−301.