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陈越中等:背栅型纳米真空沟道晶体管阵列的电学特性及其高频小信号等效电路模型研究                                       301


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              引文信息:陈越中,赵浩东,俞道龙,等. 背栅型纳米真空沟道晶体管阵列的电学特性及其高频小信号等效电路模型研究[J].
                      真空与低温,2025,31(3):292−301.
                      CHEN Y Z,ZHAO H D,YU D L,et al. Electrical characteristics and high-frequency small-signal equivalent circuit model
                      of back-gated nanoscale vacuum channel transistor arrays[J]. Vacuum and Cryogenics,2025,31(3):292−301.
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