Page 83 - 《真空与低温》2025年第3期

真空与低温 第 31 卷 第 3 期
354 Vacuum and Cryogenics 2025 年 5 月

硅 尖 锥 冷 阴 极 阵 列 衬 底 供 应 电 流 一 致 化 排 布 设 计

陈 阳，黄一峰，佘峻聪 *
（中山大学电子与信息工程学院（微电子学院）
光电材料与技术国家重点实验室 广东省显示材料与技术重点实验室，广州 510275）

摘要：集成栅极 P 型硅微尖锥冷阴极阵列具有衬底供应电流受限、发射电流稳定的特点，可作为高性能电子
源应用于现代真空电子部件和相关装备中。衬底供应电流在尖锥阵列中的分配均匀性是影响各个尖锥发射电流
均匀性及总电流强度的关键因素。基于反型层电子输运模型对衬底供应电流在尖锥阵列中的分布进行仿真计算，
通过优化设计阴极排布和栅极图案提升衬底电流的供应一致性，为获得高均匀性、高稳定性的大电流场发射电子
源阵列提供参考。
关键词：场致电子发射；集成栅极；P 型硅微尖锥阵列；衬底供应电流；反型层电子输运；阴极排布
中图分类号：TB79 文献标志码：A 文章编号：1006−7086（2025）03−0354−06
DOI：10.12446/j.issn.1006-7086.2025.03.010

Arrangement Design of Si-tip Field Emitter Array for Uniform Current Supply from the Substrate

*
CHEN Yang，HUANG Yifeng，SHE Juncong
（State Key Laboratory of Optoelectronic Materials and Technologies，Guangdong Province Key
Laboratory of Display Material and Technology，School of Electronics and Information Technology
（School of Microelectronics），Sun Yat-sen University，Guangzhou 510275，China）

Abstract：Gated p-type Si-tips have great potential for providing stable and reliable field electron emission. The emis-
sion current of a gated p-type Si-tip array is supplied from the generation current in the depletion region in the substrate，
which transports to each tip in the array via the inversion layer. The current supply uniformity in the p-type Si-tip array is a
crucial factor to affect the tip-to-tip uniformity of the emission current intensity. In this work，finite element simulation of the
current supply distribution in gated p-type Si-tip was carried out based on the physical model of diffusion current in the inver-
sion layer. It was found that in a regular densely arranged p-type Si-tip array，the tips at the edge of the array received more
current supply than the tips inside the array， inducing nonuniform current supply. Several arrangements were designed for
achieving uniform current supply in the array. Firstly，the tips were dispersedly arranged on the gate electrode，which made
the current supply for the tips at the edge and inside of the array the same. Secondly，geometric symmetry was employed to
construct p-type Si-tips with equivalent position for uniform current supply. Si-tip array in ring and line arrangement were
demonstrated，which realized dense arrangement of the p-type Si-tip in one geometric dimension. Both the ring array and line
array can be dispersedly arranged on the gate electrode to expand to large-scale multi-ring and multi-line p-type Si-tip array.
Lastly，a densely arranged p-type Si-tip array with separate lead wires was proposed，in which the inversion current uniform-
ly transports to each tip through the corresponding lead wire. High-density p-type Si-tip array can be achieved by decreasing
the width and separation of the lead wires. The work provides new methods to achieve field emitter array with uniform cur-
rent supply and high current emission.
Key words：field electron emission；integrated gate；p-type Si-tip array；current supply from substrate；inversion electron
transport；cathode arrangement

收稿日期：2025−02−05
基金项目：国家重点研发计划项目（2021YFA1200600）
作者简介：陈阳，博士研究生。E-mail：cheny693@mail2.sysu.edu.cn
通信作者：佘峻聪，博士，教授。E-mail：shejc@mail.sysu.edu.cn