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陈 阳等:硅尖锥冷阴极阵列衬底供应电流一致化排布设计                                        359


                 electron  emission  from  Si  tip  with  ultra-thin  diamond  like  sics Letters,2006,89:233518.
                 carbon coating [C]// Brno:The Technical Digest of 37th In-  [9]   DING M,SHA G,AKINWANDE A. Silicon field emission
                 ternational  Vacuum  Nanoelectronics  Conference  (IVNC),  arrays with atomically sharp tips:Turn-on voltage and the ef-
                 2024.                                             fect of tip radius distribution[J]. IEEE Transactions on Elec-
              [2]   HUANG  J, HUANG  Y, ZENG  M, et  al.  Fabrication  of  tron Devices,2002,49(12):2333−2342.
                 Spindt-type nanometer-sized chromium tips for application as  [10]   HUANG Y,HUANG Z,SHE J,et al. Quasi-saturated ar-
                 field-electron emitters by releasing the stress of the deposited  senic concentration and uniform electron emission by regu-
                 thin film[J]. ACS Applied Nano Materials,2023,6(1):351−  lating  thermal  oxidation  of  Si  nanotips[J].  IEEE  Transac-
                 357.                                               tions on Electron Devices,2019,66(3):1545−1551.
              [3]   WANG Z,HUANG Y,CHEN Y,et al. On-chip integrated Si-  [11]   HUANG Z,HUANG Y,PAN Z,et al. Self-modulated field
                 tip  field  electron  emission  vacuum  transistor  with  saturated  electron emitter:Gated device of integrated Si tip-on-nano-
                 output characteristics [C]//Brno:The Technical Digest of 37th
                                                                    channel[J]. Applied Physics Letter,2016,109(23):233501.
                 International Vacuum Nanoelectronics Conference (IVNC),
                                                                [12]   ZENG M,HUANG Y,HUANG J,et al. Gated Si-tip with
                 2024.
                                                                    on-tip  integrated  gate-all-around  field  effect  transistor  for
              [4]   WANG  C, ZHANG  G, LIU  Q, et  al.  Fabrication  of  ZnO
                                                                    actively  controlled  field  electron  emission[J].  IEEE  Elec-
                 nanowire cold cathode flat-panel X-ray source with a reflec-
                                                                    tron Device Letters,2022,43(3):466−469.
                 tive anode[J]. Nanomaterials,2024,14(18):1504.
                                                                [13]   SAWADA K,JI K,ANDO T,et al. Characterization of p-
              [5]   陈阳,章易,黄一峰,等. 硅微尖锥冷阴极微加工及其场发
                                                                    type  silicon  field  emitters[J].  Japanese  Journal  of  Applied
                 射器件物理    [J]. 真空电子技术,2022(6):23−28.
                                                                    Physics,1994,33(9):L1345.
              [6]   HAUSLADEN  M, SCHELS  A, BUCHNER  P, et  al.  Mea-
                                                                [14]   HUANG Y,CHEN Y,HUANG Z,et al. P-type Si-tips with
                 surement of field emission array current distributions by met-
                                                                    integrated  nanochannels  for  stable  nonsaturated  high  cur-
                 al-coated CMOS image sensors[J]. Journal of Vacuum Sci-
                                                                    rent  density  field  electron  emission[J].  IEEE  Transactions
                 ence and Technology B,2024,42:062209.
                                                                    on Electron Devices,2022,69(7):3908−3913.
              [7]   HUANG Y,DENG Z,WANG W,et al. Field-induced crys-
                                                                [15]   CHEN Y,HUANG Y,WEI Y,et al. Uniform current sup-
                 talline-to-amorphous phase transformation on the Si nano-apex
                                                                    ply in gated p-type Si-tips for achieving high-performance
                 and the achieving of highly reliable Si nano-cathodes[J]. Sci-
                                                                    field electron emitter array[J]. IEEE Transactions on Elec-
                 entific Reports,2015,5:10631.
                                                                    tron Devices,2024,71(8):5034−5039.
              [8]   SHE J,HE H,XU N,et al. Arrays of vacuum microdiodes
                 using uniform diamondlike-carbon tip apexes[J]. Applied Phy-          (责任编辑:郭 云)























              引文信息:陈阳,黄一峰,佘峻聪. 硅尖锥冷阴极阵列衬底供应电流一致化排布设计[J]. 真空与低温,2025,31(3):354−359.
                      CHEN Y,HUANG Y F,SHE J C. Arrangement design of Si-tip field emitter array for uniform current supply from the sub-
                      strate[J]. Vacuum and Cryogenics,2025,31(3):354−359.
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