Page 42 - 《真空与低温》2025年第3期

韩熙隆等：可集成真空微纳电子器件发展与展望 313

charge effects on the current-voltage characteristics of gated air-channel diodes and transistors[J]. Micromachines，2019，
field emitter arrays[J]. Journal of Applied Physics， 1997， 10（12）：858.
82（2）：845−854. [42] HAN P， LI X， CAI J， et al. Vertical nanoscale vacuum
[28] ZHANG P，ANG Y S，GARNER A L，et al. Space–charge channel triodes based on the material system of vacuum
limited current in nanodiodes：Ballistic，collisional，and dyna- electronics[J]. Micromachines，2023，14（2）：346.
mical effects[J]. Journal of Applied Physics，2021，129（10）： [43] SHEN Z，WANG X，WU S，et al. A new kind of vertically
100902. aligned field emission transistor with a cylindrical vacuum
[29] SRISONPHAN S， JUNG Y S， KIM H K. Metal–oxide– channel[J]. Vacuum，2017，137：163−168.
semiconductor field-effect transistor with a vacuum chan- [44] HAN J W， SEOL M L， MEYYAPPAN M. A nanoscale
nel[J]. Nature Nanotechnology，2012，7（8）：504−508. vacuum field emission gated diode with an umbrella cath-
[30] PESCINI L，TILKE A，BLICK R H，et al. Nanoscale lateral ode[J]. Nanoscale Advances，2021，3（6）：1725−1729.
field-emission triode operating at atmospheric pressure[J]. [45] WEI Y，CHEN F，ZHANG Y，et al. GaN nano air channel
Advanced Materials，2001，13（23）：1780−1783. diodes：Enabling high rectification ratio and neutron robust
[31] HIGUCHI T， MAISENBACHER L， LIEHL A， et al. A radiation operation[J]. Dvanced Science，2024，11：2310300.
nanoscale vacuum-tube diode triggered by few-cycle laser [46] WEI Y， CHEN F， HUANG R， et al. Fast response GaN
pulses[J]. Applied Physics Letters，2015，106（5）：051109. nanoscale air channel diodes with highly stable 10 mA out-
[32] CHANG W T， CHUANG T Y， SU C W. Metal-based put current toward wafer-scale fabrication[J]. Advanced Sci-
asymmetric field emission diodes operated in the air[J]. Mi- ence，2023，10：2206385.
croelectronic Engineering，2020，232：111418. [47] ZHAO H，CHEN F，WEI Y，et al. Circular-gate nanoscale air
[33] CHANG W T，CHENG M C，CHUANG T Y，et al. Field channel transistors：Achieving ultralow subthreshold swing
emission air-channel devices as a voltage adder[J]. Nano- and working voltage[J]. Advanced Science，2025，12：10734.
materials，2020，10（12）：2378. [48] ZHAO D S，LIU R，FU K，et al. An Al 0.25 Ga 0.75 N/GaN lat-
[34] WU G，WEI X，ZHANG Z，et al. A graphene-based vacuum eral field emission device with a nano void channel[J]. Chi-
transistor with a high ON/OFF current ratio[J]. Advanced nese Physics Letters，2018，35（3）：038103.
Functional Materials，2015，25（37）：5972−5978. [49] HERNANDEZ N， CAHAY M， O’MARA J， et al. Field
[35] BARTOLOMEO A D，GIUBILEO F，IEMMO L，et al. Lea- emission characteristics of AlGaN/GaN nanoscale lateral va-
kage and field emission in side-gate graphene field effect tran- cuum diodes[J]. Journal of Applied Physics，2024，135（20）：
sistors[J]. Applied Physics Letters，2016，109（2）：023510. 204305.
[36] HAN J W，MEYYAPPAN M. The device made of nothing [50] HUANG R，CHEN F，YANG J，et al. Design and high-fre-
the vacuum transistor could one day replace traditional sili- quency characterization of a wafer-scale vertical bridge struc-
con[J]. IEEE Spectrum，2014，51（7）：31−35. ture nanoscale vacuum electronic device[J]. IEEE Transac-
[37] XU J，LIN C，LI Y，et al. Structure optimization of planar na- tions on Electron Devices，2024，71（5）：3221−3227.
noscale vacuum channel transistor[J]. Micromachines，2023， [51] HAN J W，AHN J H，CHOI Y K. Damage immune field effect
14（2）：488. transistors with vacuum gate dielectric[J]. Journal of Vacuum
[38] LIU M， FU W， YANG Y， et al. Excellent field emission Science & Technology B，2011，29（1）：011014.
properties of VO 2 （A） nanogap emitters in air[J]. Applied [52] HAN J W，MOON D I，OH J S，et al. Vacuum gate dielec-
Physics Letters，2018，112（9）：093104. tric gate-all-around nanowire for hot carrier injection and bias
[39] SAPKOTA K R，LEONARD F，TALIN A A，et al. Ultra- temperature instability free transistor[J]. Applied Physics
low voltage GaN vacuum nanodiodes in air[J]. Nano Letters， Letters，2014，104（25）：253506.
2021，21（5）：1928−1934. [53] DUAN J L，LEI D Y，CHEN F，et al. Vertically-aligned sin-
[40] BOZLER C，HARRIS C，RABE S，et al. Arrays of gated gle-crystal nanocone arrays：Controlled fabrication and en-
field-emitter cones having 0.32-Mu-M Tip-to-Tip spacing[J]. hanced field emission[J]. ACS Applied Materials & Inter-
Journal of Vacuum Science & Technology B，1994，12（2）： faces，2016，8（1）：472−479.
629−632. [54] FILIPPOV S V，KOLOSKO A G，POPOV E O，et al. Inves-
[41] CHANG W T，HSU H J，PAO P H. Vertical field emission tigation of the emission properties of a silicon blade-type