Page 6 - 《真空与低温》2025年第3期

第 31 卷 第 3 期 真空与低温
2025 年 5 月 Vacuum and Cryogenics 277

微 纳 空 气 沟 道 晶 体 管 技 术 研 究 进 展 综 述

李 沫，魏亚洲，陈飞良，赵海全，黄瑞涵，孙立新，张 健 *
（电子科技大学 电子科学与工程学院，成都 611731）

摘要：微纳空气沟道晶体管通过“挖空”半导体电子输运沟道，使电子在纳米尺度空气沟道可实现无散射弹道
输运，从而具备超快响应速度、超高输运效率、超高工作频率、超高响应度以及优异的抗辐照、耐高温等特性，并
能与传统固态器件集成。这种新型晶体管已引起国内外广泛关注，在大功率皮秒级开关、毫米波太赫兹器件、光
电探测等领域展现出优秀性能，为后摩尔时代器件发展提供了新思路。阐述了微纳空气沟道晶体管的工作原理、
国内外发展现状、典型构型及工艺技术，并探讨其发展前景。
关键词：微纳空气沟道晶体管；电子弹道输运；超快响应速度；抗辐照；耐高温
中图分类号：TB71 文献标志码：A 文章编号：1006−7086（2025）03−0277−15
DOI：10.12446/j.issn.1006-7086.2025.03.001

Review of the Progress of Research on Micro-nano Air Channel Transistor Technology

*
LI Mo，WEI Yazhou，CHEN Feiliang，ZHAO Haiquan，HUANG Ruihan，SUN Lixin，ZHANG Jian
（School of Electronic Science and Engineering，
University of Electronic Science and Technology of China，Chengdu 611731，China）

Abstract：The vacuum electronic device has gone through more than a hundred years since its birth and has had a pro-
found impact on promoting the development of information technology. But since the middle of the 20th century，semicon-
ductor devices have gradually replaced vacuum electronic devices in many application fields by virtue of their excellent per-
formance such as miniaturization，integration and low cost，and have made remarkable achievements. However，as Moore's
law is approaching its limitation，semiconductor devices and chips have been faced with many serious problems such as short-
channel effect，gate leakage increase and quantum effect，and the development of new transistor architectures is imperative.
In fact，vacuum is the most ideal medium for electron transport because there is no lattice collision and energy dissipation，
and the electron saturation speed is close to the speed of light. Therefore，in recent years，it has been proposed to combine
vacuum electronic devices with semiconductor devices to form a new “micro-nano air channel transistor”. The transistor uti-
lizes a “hollow” semiconductor electron transport channel to enable ballistic electron transport in the nanoscale air channel
without scattering，thus achieving a super-fast response speed，ultra-high transport efficiency，ultra-high operating frequency，

ultra-high response，as well as excellent anti-irradiation resistance to high temperatures，and can be integrated with the tradi-
tional solid-state devices. This new type of transistor has attracted wide attention at home and abroad，and has shown excel-
lent performance in the fields of high-power picosecond switch，millimeter-wave terahertz device，and optoelectronic detec-
tion，providing new ideas for the development of devices in the post-Moore era. The working principle，domestic and interna-
tional development status，typical configuration and process technology of micro-nano air channel transistors are described，
and their development prospects are discussed.
Key words：micro-nano air channel transistors；electron ballistic transport；ultrafast response；irradiation resistance；high
temperature resistance

收稿日期：2024−12−31
基金项目：国防基础科研计划资助项目（JCKY2021110B069）；中央高校基本科研项目（ZYGX2021J028）
作者简介：李沫，博士，教授。E-mail：limo@uestc.edu.cn
通信作者：张健，博士，教授。E-mail：jianzhang@uestc.edu.cn