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568 摩 擦 学 学 报 第 40 卷

与磨料磨具工程, 2016, 36(5): 21–25]. [D]. 长沙: 湖南大学, 2013].
[35] Lu J, Rogers C, Manno V P, et al. Measurements of slurry film [38] Zhou Guoan, Chong Baochun, Liu Bin, et al. Study on the property
thickness and wafer drag during CMP[J]. Journal of the
of polishing pad in CMP[J]. Microscope, Measurement,
Electrochemical Society, 2004, 151(4): G241–G247.
Microfabrication & Equipment, 2008, 45(8): 488–491 (in Chinese)
[36] Yu Wei, Lv Xun, Lou Feiyan. Effect of polishing speed on slurry
[周国安, 种宝春, 柳滨, 等. CMP中抛光垫的性质研究[J]. 显微、测
film thickness in chemical mechanical polishing[J]. Light Industry
量、微细加工技术与设备, 2008, 45(8): 488–491].
Machinery, 2008, 26(6): 97–99 (in Chinese) [郁炜, 吕迅, 楼飞燕.
[39] Wang Shengli, Yuan Yujie, Liu Yuling. Influence of process
CMP加工过程中抛光速度对液膜厚度的影响分析[J]. 轻工机械,
parameters on polishing rate of copper in chemical mechanical
2008, 26(6): 97–99]. doi: 10.3969/j.issn.1005-2895.2008.06.028.
polishing[J]. Lubrication Engineering, 2006, (7): 113–114
[37] Mei Jinbo. Research on technology in the chemical-mechanical
polishing for aluminum alloy[D]. Changsha: Hunan University, (in Chinese) [王胜利, 袁育杰, 刘玉岭. 铜CMP中工艺参数对抛光
2013(in Chinese) [梅锦波. 铝合金化学机械抛光工艺技术的研究 速率的影响[J]. 润滑与密封, 2006, (7): 113–114].