Page 20 - 《真空与低温》2025年第3期

李 沫等：微纳空气沟道晶体管技术研究进展综述 291

asymmetric field emission diodes operated in the air[J]. Mi- enabled picosecond switches for ultrafast electronics[J]. Na-
croelectronic Engineering，2020，232（7）：111418. ture，2020，579（7800）：534−539.
[43] LI N N，ZHANG B L，HE Y，et al. Sub-picosecond nanodi- [51] ZHAO H Q， HUANG R H， CHEN F L， et al. Ultrahigh
odes for low-power ultrafast electronics[J]. Advanced Mate- speed on-chip micro/nano plasma devices：switching speed
rials，2021，33（33）：2100874. and turn-on voltage optimization[J]. IEEE Trans Electron
[44] XU J，WANG Q L，TAO Z，et al. High-quality and stable Devices，2023，70（9）：4860−4865.
electron emission device with sub-30-nm aligned nanogap [52] ROSE L B D， JONES W M， SCHERER A. Lateral
arrays[J]. IEEE Trans Electron Devices，2017，64（5）：2364− nanoscale field emission comb for frequency mixing[J]. Ap-
2368. plied Physics Letters，2023，123（1）：013505.
[45] ZHAO H，CHEN F，SUN L，et al. High current and rectifi- [53] FAN L，BI J，ZHAO B，et al. Nanoscale vacuum channel
cation in wafer-level planar nanoscale air channel diodes Hall sensors[J]. IEEE Sensors Journal，2022，22（24）：23806−
with heterogeneous electrodes[J]. IEEE Electron Device
23811.
Letters，2024，46（2）：306−309.
[54] LI X，CHEN F，WANG J，et al. Nano-air-channel Si pho-
[46] SRISONPHAN S，HONGESOMBUT K. Tuning the ballis-
todetectors with enhanced responsivity and photocurrent[J].
tic electron transport of spatial graphene-metal sandwich
IEEE Electron Device Letters，2025，46（2）：223−226.
electrode on a vacuum-silicon-based device[J]. RSC Adva-
[55] CHEN F，LI M，LI X，et al. Photoenhanced field-emission
nces，2015，5（3）：2032−2037.
nano-air-channel devices for terahertz generation [J/OL]. Pre-
[47] CHANG W T，HSU H J，PAO P H. Vertical field emission
print （Version1） available at Research Square，[2024-12-31].
air-channel diodes and transistors[J]. Micromachines，2019，
https://doiorg/1021203/rs3rs-5265138/v1，2024.
10（12）：858.
[56] BHATTACHARYA R， HAY R， CANNON M， et al.
[48] HUANG R H，CHEN F L，YANG J X，et al. Design and
Demonstration of a silicon gated field emitter array based
high-frequency characterization of a wafer-scale vertical bri-
low frequency Colpitts oscillator at 400 °C[J]. Journal of
dge structure nanoscale vacuum electronic device[J]. IEEE
Vacuum Science & Technology B，2023，41（2）：023201.
Trans Electron Devices，2024，71（5）：3221−3227.
[57] HAN J W，MOON D I，MEYYAPPAN M. Nanoscale vacuum
[49] CHEN B，FAN L，BI J，et al. Nanoscale air channel devices-
channel transistor[J]. Nano Letters， 2017， 17（4）： 2146−
inheritance and breakthrough of vacuum tube[J]. Nano Ma-
2151.
terials Science，2024，6（6）：714−725.
[50] NIKOO M S，JAFARI A，PERERA N，et al. Nanoplasma- （责任编辑：郭 云）

引文信息：李沫，魏亚洲，陈飞良，等. 微纳空气沟道晶体管技术研究进展综述[J]. 真空与低温，2025，31（3）：277−291.
LI M，WEI Y Z，CHEN F L，et al. Review of the progress of research on micro-nano air channel transistor technology[J].
Vacuum and Cryogenics，2025，31（3）：277−291.