Page 19 - 《真空与低温》2025年第3期

290 真空与低温 第 31 卷 第 3 期

100（21）：213505. radiation operation[J]. Advanced Science， 2024， 11（33）：
[18] ZHAO S H，DING H，LI X Q，et al. The selection and de- 2310300.
sign of electrode materials for field emission devices[J]. [31] ZHAO D S，LIU R，FU K，et al. An Al 0.25 Ga 0.75 N/GaN later-
Materials Science in Semiconductor Processing，2023，167： al field emission device with a nano void channel[J]. Chi-

107804. nese Physics Letters，2018，35（3）：038103.
[19] LIU M，YANG Y，LI T，et al. Low voltage field emission of [32] HERNANDEZ N， CAHAY M， O'MARA J， et al. Field
single Cu nanowire in air with nanoscale gaps for vacuum emission characteristics of AlGaN/GaN nanoscale lateral va-
electronics[J]. Micro & Nano Letters，2017，12（11）：897− cuum diodes[J]. Journal of Applied Physics，2024，135（20）：
900. 204305.
[20] NIRANTAR S，PATIL B，TRIPATHI D C，et al. Metal-air [33] HAN J W，SEOL M L，MOON D I，et al. Nanoscale vacuum
field emission devices - nano electrode geometries compari- channel transistors fabricated on silicon carbide wafers[J].
son of performance and stability[J]. Small， 2022， 18（47）： Nature Electronics，2019，2（9）：405−411.
2203234. [34] TANG M L，MA C C，LIU L N，et al. β-Ga 2 O 3 Air-channel
[21] JIN H S，HEE S J，OK J B，et al. Vacuum tunneling transis- field-emission nanodiode with ultrahigh current density and
tor with nano vacuum chamber for harsh environments[J]. low turn-on voltage[J]. Nano Letters，2024，24（5）：1769−
ACS Nano，2023，17（20）：19696−19708. 1775.
[22] HAN J W， OH J S， MEYYAPPAN M. Cofabrication of [35] HSU S H，KANG W P，RAINA S，et al. Nanodiamond vac-
vacuum field emission transistor （VFET） and MOSFET[J]. uum field emission microtriode[J]. Journal of Vacuum Sci-
IEEE Trans Nanotechnol，2014，13（3）：464−468. ence & Technology B，2017，35（3）：032201.
[23] LIU M，LIANG S T，SHI D F，et al. An emission stable ver- [36] SUBRAMANIAN K， KANG W P， DAVIDSON J L. A
tical air channel diode by a low-cost and IC compatible BOE Monolithic nanodiamond lateral field emission vacuum tran-
etching process[J]. Nanoscale，2021，13（11）：5693−5699. sistor[J]. IEEE Electron Device Letters， 2008， 29（11）：
[24] WANG Y W，XIANG L，YANG W，et al. High-performa- 1259−1261.
nce on-chip thermionic electron micro-emitter arrays based [37] KANG W P，DAVIDSON J L，SUBRAMANIAN K，et al.
on super-aligned carbon nanotube films[J]. Advanced Func- Nanodiamond lateral VFEM technology for harsh environ-
tional Materials，2020，30（7）：1907814. ments[J]. IEEE Transactions on Nuclear Science， 2007，
[25] WANG A W，ZHAO J Z，CHEN K，et al. Ultracoherent sin- 54（4）：1061−1065.
gle-electron emission of carbon nanotubes[J]. Advanced [38] HSU S H，KANG W P，DAVIDSON J L，et al. Nanodia-
Materials，2023，35（31）：2300185. mond vacuum field emission integrated differential amplifi-
[26] WU G T，WEI X L，GAO S，et al. Tunable graphene micro- er[J]. IEEE Transactions on Electron Devices，2013，60（1）：
emitters with fast temporal response and controllable elec- 487−493.
tron emission[J]. Nature Communications，2016，7：11513. [39] HSU S H， KANG W P， DAVIDSON J L， et al. Perfor-
[27] SRISONPHAN S，KIM M，KIM H K. Space charge neu- mance characteristics of nanocrystalline diamond vacuum
tralization by electron-transparent suspended graphene[J]. field emission transistor array[J]. Journal of Applied Physics，
Scientific Reports，2014，4：3764. 2012，111（11）：114502.
[28] SAPKOTA K R， LEONARD F， TALIN A A， et al. Ul- [40] CHANG W T，CHENG M C，CHUANG S Y，et al. Field
tralow voltage GaN vacuum nanodiodes in air[J]. Nano Let- emission air-channel devices as a voltage adder[J]. Nano-
ters，2021，21（5）：1928−1934. materials，2020，10（12）：2378.
[29] WEI Y Z，CHEN F L，HUANG R H，et al. Fast response [41] ZHANG Y，WEI Y，PAN Y，et al. A planar GaN nano air
GaN nanoscale air channel diodes with highly stable 10 mA channel diode with high current and radiation-resistance[C]//
output current toward wafer-scale fabrication[J]. Advanced 2024 Joint International Vacuum Electronics Conference
Science，2023，10（17）：2206385. and International Vacuum Electron Sources Conference
[30] WEI Y，CHEN F，ZHANG Y，et al. GaN nano air channel （IVEC+ IVESC），2024.
diodes：Enabling high rectification ratio and neutron robust [42] CHANG W T， CHUANG T Y， SU C W. Metal-based