Page 80 - 《真空与低温》2025年第5期
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第 31 卷 第 5 期 真空与低温
2025 年 9 月 Vacuum and Cryogenics 619
深 层 放 电 脉 冲 特 征 模 拟 及 对 MOS 器 件 损 伤 试 验
2
陈益峰 1,2 ，冯 娜 ，王金晓 ，高志良 ，邵 焜 2
1
2
（1. 许昌学院化工与材料学院，河南 许昌 461000；
2. 北京东方计量测试研究所，北京 100086）
摘要：深层带电效应已经成为威胁卫星在轨安全的主要空间环境效应因素。为准确模拟深层放电脉冲特征，
实现星用器件抗深层放电的性能评价，提出了采用 RLC 优化电路与商用静电放电发生器相结合的方法。建立了
一种能够定量研究深层放电对电子器件损伤效应的测试装置，并对 MOS 器件开展了试验测试，分析了其损伤机
制。研究结果表明，经 RLC 电路优化后的脉冲波形、电流幅值、持续时间等参数均符合深层放电特征，实现了深
层放电脉冲的有效模拟。当脉冲电流幅值增加至 9 A 时，放电脉冲导致 MOS 器件的 SiO 2 绝缘层击穿，使 MOS 器
件发生不可恢复的“硬损伤”现象；同时研究发现，放电电流低于损伤阈值时放电脉冲同样会造成绝缘层损伤，且
该损伤可通过多次累积最终导致绝缘层彻底击穿。
关键词：空间辐射环境；深层带电效应；脉冲特征；MOS 器件；损伤机制；累积效应
中图分类号：TB71；V57 文献标志码：A 文章编号：1006−7086（2025）05−0619−07
DOI：10.12446/j.issn.1006-7086.2025.05.010
Experimental on Pulse Simulation of Deep Charging Effect and Damage to MOSFET
1,2 2 1 2 2
CHEN Yifeng ，FENG Na ，WANG Jinxiao ，GAO Zhiliang ，SHAO Kun
（1. School of Chemical and Materials Engineering，Xuchang University，Xuchang 461000，Henan，China；
2. Beijing Orient Institute for Measurement & Test，Beijing 100086，China）
Abstract：The deep charge effect has emerged as a primary space environmental factor posing significant threats to the
orbital safety of satellites. To accurately simulate the characteristics of deep discharge pulses and evaluate the resistance of
spacecraft components against the deep discharge，researchers have adopted an RLC circuit to optimize the parameters of dis-
charge pulses generated by commercial ESD generators，including waveform，current amplitude，and duration. This approach
has enabled the simulation of pulses exhibiting oscillatory attenuation，microsecond-scale durations，and small current amplitu-
des. By ensuring that the simulated pulses align with the characteristics of deep discharge while offering the benefits of excellent
reproducibility and adjustable discharge parameters，a simulation testing methodology tailored for quantitative investigation
of deep discharge-induced damage to electronic devices has been established. MOS devices have been tested using this methodo-
logy，and their damage mechanisms have been analyzed. The results indicate that when a simulated pulse is injected into the
gate of a MOS device，an interference signal is generated. When the pulse current amplitude is low，the device can swiftly re-
cover its signal output. However，when the current increases to 9 A，the simulated pulse triggers a breakdown of the internal
insulation layer，leading to irreversible “hard damage” to the MOS device. Furthermore，research has shown that even when
the discharge current falls below the damage threshold，the simulated pulse can still cause insulation damage，resulting in an
increased leakage current between the drain and source of the MOS device. This damage can accumulate over multiple discha-
rge instances until the insulation layer is completely compromised，ultimately causing device failure. This research holds sig-
nificant guidance and application value for evaluating satellite deep electrification effects and designing protective measures.
It provides a comprehensive understanding of the damage mechanisms caused by deep discharge pulses and offers insights into
the development of more resilient spacecraft components capable of withstanding such extreme space environmental conditions.
Key words：space radiation environment；deep charging effect；pulse characteristics；MOSFET；damage mechanism；cu-
mulative effect
收稿日期：2025−04−21
基金项目：装备预先研究共用技术项目（50909050201）
作者简介：陈益峰，博士，教授。E-mail：chenyifeng04@qq.com
