Page 118 - 《真空与低温》2025年第3期
P. 118
尉鹏举等:InAs/GaSbⅡ类超晶格多色红外探测器降低串音影响的研究进展 389
InAs/GaSb short-period superlattices for high-resolution mid- [23] WANG X H,LI J Z,YAN Y,et al. Dark current analysis of
wavelength infrared focal plane array detectors[J]. Journal of InAs/GaSb Type II superlattice infrared detectors[J]. IEEE
Crystal Growth,2005,278(1/4):156−161. Transactions on Electron Devices,2023(99):1−11.
[11] AIFER E H,JACKSON E M,BOISHIN G,et al. Very-long [24] WANG X H,LI J Z,YAN Y,et al. Effect of “M” and “B”
wave ternary antimonide superlattice photodiode with 21 μm superlattice barrier layers on dark current of long-wave-
cutoff[J]. Applied Physics Letters, 2003, 82(25): 4411− length infrared detectors[J]. Materials Science in Semicon-
4413. ductor Processing,2024,173:108143.
[12] ZHU Z M,BHATTACHARYA P,PLIS E,et al. Low dark [25] ROGALSKI A. New ternary alloy systems for infrared de-
current InAs/GaSb type-II superlattice infrared photodetec- tectors[C]//Proceedings Volume 1845,Liquid and Solid State
tors with resonant tunneling filters[J]. Journal of Physics, Crystals:Physics,Technology and Application,1993.
2006,39(23):4997−5001. [26] BANDARA S,MALONEY P G,BARIL N,et al. Doping
[13] YOUNGDALE E R,MEYER J R,HOFFMAN C A et al. dependence of minority carrier lifetime in long-wave Sb-
Auger lifetime enhancement in InAs-Ga 1-x In x Sb superlatti- based type II superlattice infrared detector materials[J]. Op-
ces[J]. Applied Physics Letters,1994,64(23):3160−3162. tical Engineering,2011,50(6):1015.
[14] NORTON P R,CAMPBELL J B,HOM S B,et al. Third- [27] PELLEGRINO J,DEWAMES R. Minority carrier lifetime
generation infrared imagers[J]. Proceedings of SPIE,2000, characteristics in type II InAs/GaSb LWIR superlattice
+
+
4130:226−236. n πp photodiodes[C]//Proceedings of SPIE,2009.
[15] 蒋洞微,徐应强,王国伟,等. 基于锑化物二类超晶格的多 [28] RODRIGUEZ J B,PLIS E,BISHOP G,et al. nBn structure
色红外探测器研究进展 [J]. 人工晶体学报,2020,49(12): based on InAs/GaSb type-II strained layer superlattces[J].
2211−2220. Applied Physics Letters,2007,91(4): 043514.
[16] BAXTER R. D, BATE R. T, REID F J. Ion-pairing be- [29] KIM H S,PLIS E,RODRIGUEZ J B,et al. Mid-IR focal
tween lithium and residual acceptors in GaSb[J]. Journal of plane array based on type-II InAs/GaSb strain layer super-
Physics & Chemistry of Solids,1965,26(1):41−48. lattice detector with nBn design[J]. Applied Physics Letters,
[17] ANAVAMA C,TANAHASHI T,KUWATSUKA H,et al. 2008,92(18):2545.
High-purity GaSb epitaxial layers grown from Sb-rich solu- [30] STEINSHNIDER J,WEIMER M,KASPI R,et al. Visualiz-
tions[J]. Applied Physics Letters,1990,56:239−240. ing interfacial structure at non-common-atom heterojunc-
[18] BAI Y,ZHAO L,JU D,et al. Wide-angle,polarization-in- tions with cross-sectional scanning tunneling microscopy[J].
dependent and dual-band infrared perfect absorber based on Physical Review Letters,2000,85(14):2953−2956.
L-shaped metamaterial[J]. Optics Express, 2015, 23(7): [31] KASPI R,STEINSHNIDER J,WEIMER M,et al. As-soak
8670−8680. control of the InAs-on-GaSb interface[J]. Journal of Crystal
[19] WEI Y J,GIN A,RAZEGHI M,et al. Type II InAs/GaSb Growth,2001,225(2/4):544−549.
superlattice photovoltaic detectors with cutoff wavelength [32] KASPI R. Compositional abruptness at the InAs-on-GaSb
approaching 32 μm[J]. Applied Physics Letters, 2002, 81 interface:Optimizing growth by using the Sb desorption sig-
(19):3675−3683. nature[J]. Journal of Crystal Growth,1999,201/202:864−
[20] WEI Y J,HOOD A,YAU H,et al. Uncooled operation of 867.
type-II InAs/GaSb superlattice photodiodes in the Mid-wave- [33] WANG X H,LI J Z,YAN Y,et al. Reduction of surface
length infrared range[J]. Applied Physics Letters, 2005, leakage current of InAs/GaSb long-wavelength superlattice
86(23):233106−3. detectors using SiO 2 and anodic sulfide composite passiva-
[21] WEI Y J, GIN A, RAZEGHI M, et al. Advanced InAs/ tion[J]. Materials Science in Semiconductor Processing,
GaSb superlattice photovoltaic detectors for very long wave- 2023,164:107597.
length infrared applications[J]. Applied Physics Letters,2002, [34] WANG X H,LI J Z,YAN Y,et al. Investigation of passiva-
80(18):3262−3263. tion pretreatment processes for mid-/long-wavelength dual-
[22] 马晓乐. GaSb 基双色红外探测材料与器件研究 [D]. 昆明: band infrared focal plane arrays based on type-II InAs/GaSb
云南师范大学,2021. superlattices[J]. Advanced Engineering Materials, 2024,