Page 111 - 《振动工程学报》2025年第11期

第 38 卷第 11 期 振 动 工 程 学 报 Vol. 38 No. 11
2025 年 11 月 Journal of Vibration Engineering Nov. 2025

IGBT 自 激 电 磁 振 动 信 号 的 压 电 薄 膜 传 感 与 检 测

何赟泽 ， 张 杰 ， 李祺颖 ， 平 阳 ， 郭迪鑫 ， 何洪英 1
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（1. 湖南大学电气与信息工程学院，湖南 长沙 410082； 2. 湖南大学深圳研究院，广东 深圳 518000；
3. 太原理工大学电气与动力工程学院，山西 太原 030024）
摘要：本研究旨在利用压电薄膜传感器对绝缘栅双极型晶体管（IGBT）关断过程中产生的自激电磁振动信号进行试验分析，探
讨不同测试条件下压电薄膜传感器测得 IGBT 器件自激电磁振动信号的特性及其与传播路径、电路参数的关系。本文搭建了
IGBT 器件的脉冲测试平台，通过脉冲触发信号控制 IGBT 器件的开关过程，并配合示波器同步采集 IGBT 器件的电参量与自
激电磁振动信号。本文对比不同安装位置及有/无耦合剂的 IGBT 器件自激电磁振动信号传播路径，确定了器件封装外壳涂抹
耦合剂的压电薄膜传感器检测方式。通过改变关断电流与母线电压获得 IGBT 器件在不同工况下的自激电磁振动信号时/频
域特征变化情况，发现压电薄膜传感器检测的自激电磁振动信号幅值、信号能量与关断电流和母线电压的变化均呈现正相
关，且压电薄膜传感器测得信号频峰主要集中在 35、57 和 135 kHz 附近。补充开展了过栅压故障工况试验，以探讨异常状态
下自激电磁振动信号的特征变化。对比了压电薄膜传感器与压电陶瓷声发射传感器在相同传播条件下的检测结果，发现两
者在自激电磁振动信号能量响应趋势上具有一致性，但频谱分布与灵敏度特性存在差异，压电薄膜传感器在低频信号捕捉及
安装适应性方面具有优势。本文的研究结果可为 IGBT 自激电磁振动信号的宽频带采集与状态监测方法优化提供依据。
关键词： 自激电磁振动；绝缘栅双极型晶体管；压电薄膜；振动监测
中图分类号：TM930.12 文献标志码：A DOI：10.16385/j.cnki.issn.1004-4523.202508076

Experimental study on the detection of IGBT self-excited electromagnetic
vibration signal using a piezoelectric film sensor

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HE Yunze ，ZHANG Jie ，LI Qiying ，PING Yang ，GUO Dixin ，HE Hongying 1
（1.College of Electrical and Information Engineering，Hunan University，Changsha 410082，China；
2.Shenzhen Research Institute，Hunan University，Shenzhen 518000，China；
3.College of Electrical and Power Engineering，Taiyuan University of Technology，Taiyuan 030024，China）
Abstract： This study experimentally investigates the self-excited electromagnetic vibration (SEMV) signals generated during the turn-off
process of insulated gate bipolar transistors (IGBTs) using piezoelectric thin film sensors，analyzing their characteristics under varying test
conditions and their correlation with propagation paths and circuit parameters. A pulsed test platform was constructed to synchronously acquire
IGBT electrical parameters and SEMV signals via the pulse-triggered switching process and an oscilloscope. Comparative analysis of signal
propagation paths under different sensor placements and coupling agent applications determined the optimal detection method，involving a
coupling agent applied to the device’s encapsulation shell. Subsequently，this study obtained the time-frequency domain characteristics of self-
excited electromagnetic vibration signals from IGBT devices under different operating conditions by varying the turn-off current and bus
voltage. The results demonstrate that both the amplitude and energy of the self-excited electromagnetic vibration signals detected by the
piezoelectric thin film sensor exhibit positive correlations with the turn-off current and bus voltage. Furthermore，the frequency peaks of the
signals measured by the piezoelectric thin film sensor were primarily concentrated around 35，57 and 135 kHz. Additionally，an over-gate-
voltage fault test was conducted to examine the characteristics of SEMV signals under abnormal conditions. A comparative evaluation with
piezoelectric ceramic acoustic emission sensors demonstrated consistent SEMV signal energy response trends but distinct spectral distributions
and sensitivity characteristics， highlighting the piezoelectric thin film sensor’s advantages in low-frequency detection and installation
adaptability. These findings provide a foundation for broadband SEMV signal acquisition and condition monitoring optimization in IGBT
devices.
Keywords：self-excited electromagnetic vibration；insulated gate bipolar transisitor；piezoelectric film；vibration monitoring

收稿日期：2025-08-15；修订日期：2025-09-19
基金项目：国家自然科学基金资助项目（52577010）；湖南省科技创新领军人才项目（2023RC1039）